unisonic technologies co., ltd 2sb772s pnp silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r208-002.f medium power low voltage transistor ? description the utc 2sb772s is a medium power low voltage transistor, designed for audio power amplifier, dc-dc converter and voltage regulator. ? features * high current output up to 3a * low saturation voltage * complement to 2sd882s ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sb772sl-x-aa3-r 2sb772sg-x-aa3-r sot-223 b c e tape reel 2sb772sl-x-ab3-r 2sb772sg-x-ab3-r sot-89 b c e tape reel 2sb772sl-x-t92-b 2sb772sg-x-t92-b to-92 e c b tape box 2sb772sl-x-t92-k 2sb772sg-x-t92-k to-92 e c b bulk 2SB772SL-X-T92-R 2sb772sg-x-t92-r to-92 e c b tape reel
2sb772s pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r208-002.f ? absolute maximum ratings (t a = 25c) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v peak collector current i cp -7 a dc collector current i c -3 a base current i b -0.6 a power dissipation sot-89 p d 0.5 w sot-223 1 w to-92 0.5 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -40 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -30 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-30v, i e =0 -1000 na collector cut-off current i ceo v ce =-30v, i b =0 -1000 na emitter cut-off current i ebo v eb =-3v, i c =0 -1000 na dc current gain(note 1) h fe1 v ce =-2v, i c =-20ma 30 200 h fe2 v ce =-2v, i c =-1a 100 150 400 collector-emitter satu ration voltage v ce ( sat ) i c =-2a, i b =-0.2a -0.3 -0.5 v base-emitter satura tion voltage v be ( sat ) i c =-2a, i b =-0.2a -1.0 -2.0 v current gain bandwidth product f t v ce =-5v, i c =-0.1a 80 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 45 pf note 1: pulse test: p w < 300 s, duty cycle < 2% ? classification of h fe2 rank q p e range 100 ~ 200 160 ~ 320 200 ~ 400
2sb772s pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r208-002.f typical characterics collector current, ic (ma) -10 0 -10 1 -10 2 -10 3 -10 4 -10 -1 -10 3 -10 2 -10 1 -1 collector-emitter saturation voltage vs. collector current 25c i c /i b =10 150c collector-emitter voltage, v ce (v) 01 2 3 45 0 0.4 0.8 1.6 2.0 1.2 collector current vs. collector-emitter voltage collector current, ic (ma) -10 -1 -10 0 -10 1 -10 2 -10 3 -10 4 0 200 400 600 800 v ce =-2v 150c 25c dc current gain vs. collector current collector current, ic (ma) -10 0 -10 1 -10 2 -10 3 -10 4 -10 -1 0 -0.4 -0.8 -1.2 base-emitter satura tion voltage vs. collector current i c /i b =10 25c 150c
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